Молимо вас користите овај идентификатор за цитирање или овај линк до ове ставке: https://scidar.kg.ac.rs/handle/123456789/10373
Пун извештај метаподатака
Поље DC-а ВредностЈезик
dc.rights.licenserestrictedAccess-
dc.contributor.authorJelenkovic E.-
dc.contributor.authorKovačević, Milan-
dc.contributor.authorJha S.-
dc.contributor.authorTong K.-
dc.contributor.authorNikezic, Dragoslav-
dc.date.accessioned2021-04-20T15:35:33Z-
dc.date.available2021-04-20T15:35:33Z-
dc.date.issued2013-
dc.identifier.issn0167-9317-
dc.identifier.urihttps://scidar.kg.ac.rs/handle/123456789/10373-
dc.description.abstractMetal oxide semiconductor (MOS) capacitors were fabricated with nitrided and non-nitrided sputtered oxides. The MOS structures were exposed to 2 Mrad gamma-ray dose and stored in a dry ambient for one year. Post-irradiation stability of MOS capacitors was investigated by applying Fowler-Nordheim constant current stress and monitoring the positive charge, border traps and interface states generation. It was found that nitridation increased the resistance of sputtered oxides to various defects generation under irradiation, electrical and combined radiation-electrical stress. The improved stability is explained in part by compensation of oxygen vacancy defects and Pb centers by nitrogen. © 2012 Elsevier B.V. All rights reserved.-
dc.rightsinfo:eu-repo/semantics/restrictedAccess-
dc.sourceMicroelectronic Engineering-
dc.titleDefect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress-
dc.typearticle-
dc.identifier.doi10.1016/j.mee.2012.10.016-
dc.identifier.scopus2-s2.0-84872400570-
Налази се у колекцијама:Faculty of Science, Kragujevac

Број прегледа

1025

Број преузимања

22

Датотеке у овој ставци:
Датотека Опис ВеличинаФормат 
PaperMissing.pdf
  Ограничен приступ
29.86 kBAdobe PDFСличица
Погледајте


Ставке на SCIDAR-у су заштићене ауторским правима, са свим правима задржаним, осим ако није другачије назначено.