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Title: N-channel polysilicon thin film transistors as gamma-ray detectors
Authors: Jelenkovic E.
Kovačević, Milan
Stupar, Dragan
Bajic, Jovan
Slankamenac M.
Kovačević, Milan
To, Sandy
Issue Date: 2013
Abstract: N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters. © 2013 IOP Publishing Ltd.
Type: article
DOI: 10.1088/0957-0233/24/10/105103
ISSN: 0957-0233
SCOPUS: 2-s2.0-84884756086
Appears in Collections:Faculty of Science, Kragujevac

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